Quantum Well Infrared Photodetector (QWIP) Arrays

By appropriate design of quantum wells in certain semiconductor materials, electronic levels can be designed to absorb radiation in the long wavelength infrared region (wavelength 3-20 um). A suitable material combination in this respect is the aluminum gallium arsenide/gallium arsenide (A1GaAs/GaAs) material system, with gallium arsenide (GaAs) being the substrate material.